PART |
Description |
Maker |
PSMN005-75P PSMN005-75B PSMN005_75P_75B-01 |
N-channel logic level field-effect power transistor in a plastic package using TrenchMOS technology. 75 A, 75 V, 0.005 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB From old datasheet system N-channel enhancement mode field-effect transistor
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NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
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MTM12P10 MTP12P06 MTP12P10 |
POWER FIELD EFFECT TRANSISTOR 12 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB (MTP12P06 / MTP12P10) POWER FIELD EFFECT TRANSISTOR
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Motorola Mobility Holdings, Inc. MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc]
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SSM3K05FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHALLEL MOS TYPE
|
Toshiba Semiconductor
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SSM3J02F |
600 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236 Field Effect Transistor Silicon P Channel MOS Type Power Management Switch High Speed Switching Applications TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
|
TOSHIBA[Toshiba Semiconductor] Toshiba Corporation
|
TPC6101 TPC6.01 |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) CONNECTOR ACCESSORY Field Effect Transistor Silicon P Channel MOS Type (U-MOSIII) Notebook PC Applications Portable Equipment Applications
|
Toshiba Semiconductor Toshiba Corporation
|
SSM3J13T |
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Field Effect Transistor Silicon P Channel MOS Type (U-MOSII) Power Management Switch High Speed Switching Applications
|
Toshiba Corporation TOSHIBA[Toshiba Semiconductor]
|
PTF10020 |
2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET 125 Watts/ 860-960 MHz GOLDMOS Field Effect Transistor 125 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON POWER MODULES AB Ericsson Microelectronics
|
PTF10154 |
85 Watts/ 1.93-1.99 GHz GOLDMOS Field Effect Transistor 85 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor 85瓦,1.93-1.99 GHz的GOLDMOS场效应晶体管 85 Watts 1.93-1.99 GHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson]
|
SSM3K17FU |
Field Effect Transistor Silicon N Channel MOS Type High Speed Switching Applications Analog Switch Applications TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
|
Toshiba Semiconductor
|
PTF10133 |
85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor 85瓦,860-960兆赫GOLDMOS场效应晶体管 85 Watts, 86060 MHz GOLDMOS Field Effect Transistor
|
ERICSSON[Ericsson] Ericsson Microelectronics
|
2SJ460 2SJ460M 2SJ460M-T 2SJ460-T/JM 2SJ460/JM |
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING P沟道MOS场效应晶体管高速开 P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING Pch D-MOSFET SST 50V/0.1A
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NEC, Corp. NEC[NEC]
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